| PART |
Description |
Maker |
| BC212 BC214 BC213 BC212B ON0141 BC214RL1 |
Amplifier Transistor PNP
From old datasheet system
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
Amlifier Transistors (PNP) 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Amplifier Transistors(PNP Silicon) 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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MOTOROLA[Motorola, Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
ON Semiconductor
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| MJW0281A MJW0281A05 MJW0302A MJW0281ADATASHEET MJW |
Complementary NPN?PNP Power Bipolar Transistors
; Package: SOIC NARROW; No of Pins: 14; Qty per Container: 55/Rail 15 A, 260 V, PNP, Si, POWER TRANSISTOR, TO-247AD
Complementary NPN-PNP Power Bipolar Transistors
Complementary Power Transistors
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ON Semiconductor
http://
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| PDTA115ES PDTA115E PDTC115EU PDTA115EE PDTA115EEF |
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT416 (SC-75); Container: Tape reel smd
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
PDTA115E series; PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT883 (SC-101); Container: Tape reel smd
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NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PDTA123YT215 PDTA123YE |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| 2DB1424R-13 2DB1424R |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP SURFACE MOUNT TRANSISTOR
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Diodes Incorporated
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| PDTA143TEF PDTA143TE PDTA143T PDTA143TK PDTA143TM |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
PNP resistor-equipped transistors; R1 = 4.7 k楼?, R2 = open
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NXP Semiconductors
|
| PDTA144E PDTA144EE PDTA144EU PDTA144EU115 PDTA144E |
PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=47千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 47 k惟, R2 = 47 k惟
|
NXP Semiconductors N.V.
|
| BC808-16 BC808-25 BC808-40 Q62702-C1689 BC807 BC80 |
From old datasheet system
SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PTQP0100KA-A
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 进步党硅晶体管自动对焦（自动对焦对于一般应用高集电极电流的高电流增益）
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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Fairchild Semiconductor, Corp.
|
| UMT3906 SST3906 MMST3906 2N3906 A5800337 MMST3906T |
晶体管|晶体管|进步党| 40V的五（巴西）总裁| 200mA的一c）|的SOT - 346
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | SOT-346
From old datasheet system
PNP General Purpose Transistor
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
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ROHM[Rohm]
|
| EMC4DXV5T5G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
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ON Semiconductor
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